MICROCHIP P Channel Power MOSFET 60V 320mA TO-92

This P Channel Power MOSFET from MICROCHIP is a low-threshold, enhancement-mode (normally-off) transistor that uses a vertical DMOS structure and silicon-gate manufacturing process. This combination delivers the power handling capabilities of bipolar transistors while maintaining the high input impedance and positive temperature coefficient characteristic of MOS devices.

The device is inherently free from thermal runaway and thermally-induced secondary breakdown, which enhances reliability in demanding applications. It features a low threshold voltage of -2.4V maximum, high input impedance, and low input capacitance of 80pF typical, enabling fast and efficient switching.

Key specifications include a drain-source voltage of 60V, continuous drain current of 320mA, and a low on-resistance of 3.5 ohm. Housed in a TO-92 package with a through-hole mounting for easy integration, it operates at temperatures up to 150°C with a power dissipation of 1W.

This MOSFET is ideal for logic level interfaces, including TTL and CMOS circuits, as well as solid-state relays, battery-operated systems, photovoltaic drives, and analogue switches. Its low input and output leakage and fast switching speeds make it a versatile solution for various electronic designs.

Specifications

• Channel Type: P Channel
• Drain Source Voltage: 60V
• Continuous Drain Current: 320mA
• On-Resistance: 3.5 ohm
• Threshold Voltage Max: -2.4V
• Input Capacitance: 80pF (typ.)
• Package: TO-92
• Mounting: Through Hole
• Power Dissipation: 1W
• Operating Temperature Max: 150°C
• Pin Count: 3