MICROCHIP N-Channel Power MOSFET, 60V 200mA, TO-92

The MICROCHIP N-Channel Power MOSFET is a robust enhancement-mode, vertical DMOS field-effect transistor, engineered for efficient low-power switching applications. It features a high drain-source voltage rating of 60V and a continuous drain current capability of 200mA, making it a versatile component for a variety of electronic circuits.

Key to its performance is the low drain-source on-state resistance (Rds(on)) of just 5 ohms at a 10V test voltage, which helps to minimise conduction losses and improve overall efficiency. The device boasts high input impedance and gain, resulting in very low power drive requirements, simplifying control circuitry. Its fast switching speeds, enabled by low gate charge (CISS), and excellent thermal stability ensure reliable operation in dynamic environments.

Designers will appreciate the ease of paralleling these MOSFETs for higher current applications, supported by their inherent freedom from secondary breakdown. An integral source-drain diode provides essential protection in inductive load scenarios. Housed in the industry-standard TO-92 through-hole package, it is easy to handle and suitable for prototyping or production on standard PCBs.

Specifications

• Channel Type: N-Channel
• Drain-Source Voltage (Vds): 60 V
• Continuous Drain Current (Id): 200 mA
• Drain-Source On-State Resistance (Rds(on)): 5 Ω
• Gate-Source Threshold Voltage (Max): 3 V
• Power Dissipation: 1 W
• Package / Case: TO-92
• Mounting Type: Through Hole
• Number of Pins: 3
• Operating Temperature Max: 150°C
• Dimensions (LxWxH): 43 mm x 33 mm x 15 mm
• Weight: 0.225 grams