MICROCHIP LND150N3-G Power MOSFET N Channel 500V TO-92

The MICROCHIP LND150N3-G is a high-voltage N-channel depletion-mode (normally-on) MOSFET, designed for demanding applications that require reliable performance. Utilising advanced lateral DMOS technology, this transistor delivers excellent thermal stability and is free from secondary breakdown, ensuring robust operation in a variety of scenarios.

The gate is ESD protected, enhancing durability during handling and use. With a low power drive requirement and easy parallel capability, this MOSFET simplifies circuit design and improves efficiency. The integral source-drain diode and high input impedance with low CISS further enhance its versatility.

This component is ideal for power management systems, where precise control and stability are paramount. Whether used in normally-on switches, precision constant current sources, voltage ramp generation, or amplification, the LND150N3-G provides consistent and reliable performance.

Key Specifications:

• Channel Type: N Channel
• Drain Source Voltage (Vds): 500V
• Continuous Drain Current (Id): 30mA
• Drain Source On-State Resistance: 1000 ohm
• Transistor Case Style: TO-92
• Transistor Mounting: Through Hole
• Rds(on) Test Voltage: 0V
• Power Dissipation: 740mW
• No. of Pins: 3Pins
• Operating Temperature Max: 150°C

With its exceptional thermal performance and ease of use, this MOSFET is a dependable choice for engineers and hobbyists alike, ensuring longevity and efficiency in electronic projects.