Microchip N-Channel Power MOSFET 400V 500mA TO-220AB

The Microchip Power MOSFET N-Channel 400V 500mA TO-220AB is a high-voltage N-channel depletion mode (normally-on) transistor with a 400V voltage rating and a 500mA current rating.

Overview

This device is built using a vertical DMOS structure and a silicon-gate manufacturing process. It combines the power handling capability typical of bipolar transistors with the high input impedance and positive temperature coefficient intrinsic to MOS devices. Its MOS construction makes it free from thermal runaway and thermally induced secondary breakdown, which supports reliability in demanding circuits.

Key Features

• High input impedance, requiring very little current to control the gate
• Low input capacitance for faster switching and reduced drive power
• Fast switching speeds for high-frequency applications and efficient power conversion
• Low on-resistance (Rds(on)) to minimise conduction losses
• Free from secondary breakdown and thermal runaway
• Low input and output leakage currents

Physical Specifications

• Package: TO-220AB
• Width: 3.3
• Depth: 1.5
• Height: 4.3
• Weight: 2.939 gm

Applications

This transistor is suited to switching and amplifying applications that require a high breakdown voltage, high input impedance, low input capacitance and rapid switching speeds. It is also a suitable choice for power management systems and communications networking equipment.