Infineon SPP80P06P P-Channel Power MOSFET 60V 80A TO-220

The **Infineon SPP80P06P** is a SIPMOS® P-channel enhancement mode Power Transistor, engineered for demanding power system designs. This component consistently meets high quality and performance standards, focusing on critical specifications such as on-state resistance and figure of merit.

This MOSFET offers a drain-source voltage of 60V and a continuous drain current of 80A, making it suitable for a wide range of power applications. Its low on-state resistance (0.021ohm typical) ensures efficient power handling. The device features a maximum gate-source voltage of ±20V and is avalanche rated, providing robustness in harsh operating conditions. It is halogen-free, aligning with modern environmental regulations.

Housed in a TO-220 package, this transistor is designed for through-hole mounting, offering ease of integration and reliable thermal performance. With a power dissipation of 340W and an operating temperature range up to 175°C, it handles high-power tasks efficiently. The component is AEC-Q101 qualified, indicating suitability for automotive applications. Its compact dimensions (Height: 43mm, Width: 33mm, Depth: 15mm) and light weight (approximately 0.9 grams) facilitate straightforward PCB assembly.

Key Features: • P-Channel enhancement mode • 60V drain-source voltage • 80A continuous drain current • Low on-state resistance: 0.021ohm • Avalanche rated • Halogen-free • ±20V gate-source voltage rating

Ideal for power management, automotive systems, and consumer electronics, this Infineon MOSFET delivers reliable performance and durability.