Infineon Power MOSFET, N-Channel, 650V, 31A, TO-263

The Infineon Power MOSFET is a high-performance N-channel metal-oxide-semiconductor field-effect transistor designed for robust and efficient power switching applications. It features a high drain-source voltage (Vds) of 650V and a continuous drain current (Id) rating of 31A, making it suitable for handling substantial power loads in demanding circuits.

A key advantage is its low on-state resistance (Rds(on)) of just 0.09 ohms at a 10V gate drive, which minimises conduction losses and improves overall system efficiency by reducing heat generation. The device is housed in a sturdy TO-263 (D2PAK) surface-mount package, offering an excellent balance of thermal performance and board space savings for modern electronic designs.

Reliability and Specifications

Engineered for durability, this MOSFET can dissipate up to 255W of power and operates within a wide temperature range up to a maximum junction temperature of 150°C. With a maximum gate-source threshold voltage of 3V, it ensures reliable switching control. The component is compliant with MSL 1 (Moisture Sensitivity Level 1), meaning it has an unlimited floor life at factory conditions prior to use, simplifying storage and handling in production environments.

Its compact, three-pin surface-mount design facilitates automated assembly processes, while the robust construction ensures long-term reliability in a variety of industrial, automotive, and power supply applications where stable and efficient switching is paramount.