Infineon Power MOSFET, N Channel, 200V, 30A, TO-247AC

The Infineon Power MOSFET is a high-performance, single N-channel device built using advanced HEXFET® technology. It is engineered to deliver efficient power switching and robust performance in demanding electronic circuits. Its advanced process technology enables fast switching speeds, reducing energy losses and improving overall system efficiency.

This MOSFET is fully avalanche-rated, providing enhanced durability against voltage spikes and transient conditions. It features a dynamic dv/dt rating, which contributes to greater reliability in high-speed switching applications. The planar cell structure ensures a wide Safe Operating Area (SOA), offering designers greater flexibility and margin in their power designs.

Key Features

• Utilises advanced HEXFET® power MOSFET technology for high efficiency.
• Fast switching capability minimises power loss and improves thermal performance.
• Fully avalanche-rated for increased ruggedness and reliability in harsh conditions.
• Dynamic dv/dt rating enhances performance in high-frequency applications.
• Simple drive requirements and ease of paralleling simplify circuit design and scaling.
• Planar cell structure provides a wide Safe Operating Area (SOA).
• Product qualification is conducted according to stringent JEDEC standards.

With its high power density and robust construction, this MOSFET is an ideal component for applications requiring reliable power management and control. Its TO-247AC through-hole package ensures secure mechanical mounting and efficient thermal dissipation via a heatsink.