Infineon P-Channel Power MOSFET, 60V, 1.9A, SOT-223

The Infineon P-Channel Power MOSFET is a high-performance, surface-mount component engineered for robust power management. Designed with enhancement mode operation, it offers superior switching performance and control. The device is avalanche-rated and dv/dt rated, ensuring exceptional reliability and ruggedness in demanding applications by withstanding high-voltage transients and rapid voltage changes.

Manufactured with Pb-free lead plating, this MOSFET is fully RoHS compliant and halogen-free according to IEC61249-2-21, aligning with stringent environmental and safety standards. It is also qualified according to the rigorous AEC Q101 automotive standard, guaranteeing high quality and reliability for automotive and industrial uses.

Key Electrical Specifications

• Channel Type: P-Channel
• Drain-Source Voltage (Vds): 60V
• Continuous Drain Current (Id): 1.9A
• Drain-Source On-State Resistance (Rds(on)): Typically 0.239 Ohm (tested at 10V)
• Gate-Source Threshold Voltage (Vgs(th) max): 3V
• Maximum Power Dissipation: 1.8W
• Maximum Operating Temperature: 150°C

Physical Package

Housed in a compact SOT-223 surface-mount package, this MOSFET is ideal for space-constrained PCB designs. The package features 4 pins and is designed for efficient thermal performance, helping to manage heat dissipation during operation. Its small footprint makes it a versatile choice for modern electronic assemblies.