Infineon P Channel Power MOSFET 55V 31A TO-252AA
Infineon P-Channel Power MOSFET, 55V, 31A, 0.065 ohm, TO-252AA surface mount. Ultra low on-resistance for power management.
This single P-channel HEXFET® Power MOSFET from Infineon utilises advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedised device design that HEXFET® power MOSFETs are renowned for, provides an extremely efficient and reliable device for use in a wide variety of applications.
The TO-252AA (D-Pak) case style is designed specifically for surface mounting, accommodating vapour phase, infrared, or wave soldering techniques. This ensures versatile integration into various circuit board designs and manufacturing processes.
Key Features
- Ultra low on-resistance
- Advanced process technology
- Fully avalanche rated
- Fast switching speed
- Ruggedised device design
Specifications
- Channel Type: P Channel
- Drain Source Voltage (Vds): 55 V
- Continuous Drain Current (Id): 31 A
- Drain Source On State Resistance: 0.065 ohm
- Power Dissipation: 110 W
- Gate Source Threshold Voltage Max: 4 V
- Rds(on) Test Voltage: 10 V
- Operating Temperature Max: 175 °C
- Number of Pins: 3
- Dimensions: 43 mm x 33 mm x 15 mm
- Weight: 0.23 grams
- Power management applications
- Surface mount circuit board assembly
- Vapour phase soldering
- Infrared soldering
- Channel Type: P Channel
- Drain Source Voltage (Vds): 55 V
- Continuous Drain Current (Id): 31 A
- Drain Source On State Resistance: 0.065 ohm
- Transistor Case Style: TO-252AA
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10 V
- Gate Source Threshold Voltage Max: 4 V
- Power Dissipation: 110 W
- Number of Pins: 3
- Operating Temperature Max: 175 °C
- Height: 43 mm
- Width: 33 mm
- Depth: 15 mm
- Weight: 0.23 grams
- of Pins: 3Pins
- SVHC: No SVHC (17-Jan-2023)
Documents
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