Infineon P Channel Power MOSFET 30V 3.6A SOT-23

The Infineon P Channel Power MOSFET is designed to deliver efficient power management with lower switch losses and increased reliability. Featuring an industry-standard pinout, this component is fully compatible with existing surface mount techniques, making it an excellent choice for seamless integration into your electronic designs.

This HEXFET® Power MOSFET offers multi-vendor compatibility and an environment-friendly profile, meeting the demands of modern consumer qualification standards. Its robust construction and efficient operation ensure that your circuits run smoothly and reliably, minimising energy loss during switching.

Key Specifications

• Channel Type: P Channel
• Drain Source Voltage (Vds): 30 V
• Continuous Drain Current (Id): 3.6 A
• Drain Source On State Resistance: 0.064 ohm
• Transistor Case Style: SOT-23
• Transistor Mounting: Surface Mount
• Rds(on) Test Voltage: 10 V
• Gate Source Threshold Voltage Max: 1.3 V
• Power Dissipation: 1.3 W
• Number of Pins: 3
• Operating Temperature Max: 150 °C

With its compact SOT-23 package and surface mount design, this MOSFET is perfectly suited for high-density PCB layouts. It provides a highly effective solution for power management tasks in consumer electronics, ensuring stability and performance.