INFINEON P Channel Power MOSFET, 100V, 23A, 0.117 ohm, TO-220AB
Discover the INFINEON P Channel HEXFET Power MOSFET, 100V, 23A, featuring low on-resistance and fast switching for reliable power management.
The INFINEON P Channel Power MOSFET is a high-performance HEXFET device housed in a robust TO-220AB package. Engineered for exceptional efficiency and reliability, this MOSFET features extremely low on-resistance per silicon area, ensuring minimal power loss and optimal performance in demanding environments.
Designed with a dynamic dv/dt rating, this component is both rugged and fast-switching, making it fully avalanche rated for superior durability. These advanced characteristics make it an ideal choice for a wide variety of applications requiring precise power management and robust switching capabilities.
Key Specifications
- Channel Type: P Channel
- Drain to Source Voltage (Vds): -100V
- Gate to Source Voltage (Vgs): ±20V
- Continuous Drain Current (Id): -23A (at Vgs -10V, 25°C)
- On Resistance (Rds(on)): 117mΩ (at Vgs -10V)
- Power Dissipation (Pd): 140W (at 25°C)
- Operating Junction Temperature Range: -55°C to 175°C
Whether you are designing industrial systems or consumer electronics, this through-hole MOSFET delivers the fast switching and rugged performance required for modern power applications.
- Wide variety of applications
- High-efficiency power switching
- Fast switching circuits
- Channel Type: P Channel
- Drain Source Voltage Vds: 100V
- Gate to Source Voltage: ±20V
- Continuous Drain Current Id: 23A
- Drain Source On State Resistance: 0.117 ohm
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Gate Source Threshold Voltage Max: 4V
- Power Dissipation: 140W
- Number of Pins: 3
- Operating Temperature Max: 175°C
- Operating Temperature Min: -55°C
- Product Range: HEXFET Series
- Weight: 2 grams
- Height: 43 mm
- Width: 33 mm
- Depth: 15 mm
- of Pins: 3Pins
- SVHC: No SVHC (25-Jun-2025)
Documents
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