Infineon OptiMOS N-Channel Power MOSFET 100V 100A TO-220

The Infineon OptiMOS N-Channel Power MOSFET is a 100 V, 100 A power transistor in a through-hole TO-220 package, designed for high-efficiency, high-power-density switching applications.

Overview

This OptiMOS N-Channel Power MOSFET is intended for advanced switch-mode power supply (SMPS) designs. Its low on-state resistance and low gate charge characteristics support higher system efficiency, reduced switching losses and good thermal performance. The high power density means fewer devices are required in parallel, which can help reduce board footprint and simplify design work for engineers.

Key Features

• Low on-state resistance (RDS(ON)) to minimise conduction losses
• Very low gate charge (Qg and Qgd)
• Excellent gate charge x RDS(ON) product (FOM)
• High power density for compact, powerful designs
• Through-hole TO-220 package for mechanical mounting and heat dissipation
• Halogen-free and classified as a Green device
• MSL1 (Moisture Sensitivity Level 1) rating

Applications

Suited to high-current switching applications, including:

• Switch-Mode Power Supplies (SMPS)
• DC-DC converters
• Motor drive and control systems
• Industrial automation and control
• Automotive power systems
• High-fidelity audio amplifiers

Specifications

• Voltage Rating: 100 V
• Current Rating: 100 A
• Package: TO-220 through-hole
• Width: 3.3
• Depth: 1.5
• Height: 4.3
• Weight: 3.184 g

Choose the Infineon OptiMOS N-Channel Power MOSFET 100V 100A TO-220 for switch-mode power supply and high-current switching designs that require a through-hole TO-220 device.