Infineon OptiMOS 5 Power MOSFET N Channel 150V 87A TDSON SMD

The Infineon OptiMOS 5 Power MOSFET is a high-performance N-channel transistor designed for demanding power conversion applications. Featuring a 150V drain-source voltage and a continuous drain current of 87A, this device delivers robust and efficient switching performance.

Optimised for high-frequency switching and synchronous rectification, it offers an excellent gate charge x RDS(on) product (FOM) and very low on-resistance, ensuring minimal conduction and switching losses. The very low reverse recovery charge (Qtr.) further enhances efficiency in bridge topologies and fast-switching circuits.

Qualified according to JEDEC for target applications, this MOSFET is housed in a compact TDSON surface-mount package with 8 pins, suitable for automated assembly and space-constrained designs. With a maximum operating temperature of 150°C and a power dissipation of 139W, it is built for reliability in demanding environments.

Key Features:

• N-channel, normal level (standard gate drive)
• Drain-source voltage: 150V
• Continuous drain current: 87A
• On-state resistance (RDS(on)): typically 0.0079 ohm (9300µohm)
• Gate threshold voltage max: 3.8V
• RDS(on) test voltage: 10V
• Power dissipation: 139W
• TDSON surface-mount package, 8 pins
• Operating temperature range up to 150°C
• Product range: OptiMOS 5

This MOSFET is ideal for engineers and manufacturers seeking high-efficiency power switching in a compact, surface-mount format.