Infineon N-Channel Power MOSFET, 800V 4A, TO-252 (DPAK)

The Infineon N-Channel Power MOSFET is a high-performance, surface-mount component designed for demanding power management applications. This device features a robust 800V drain-source voltage (Vds) rating and a continuous drain current (Id) of 4A, making it suitable for high-voltage switching circuits. Its low drain-source on-state resistance (Rds(on)) of just 1.1ohm (measured at a 10V gate-source voltage) ensures minimal power loss and high efficiency during operation, helping to reduce heat generation and improve overall system reliability.

Housed in a compact and industry-standard TO-252 (DPAK) package, this MOSFET is ideal for space-constrained PCB designs. Its surface-mount construction allows for streamlined, automated assembly processes. The component offers a high power dissipation rating of 63W and can operate at temperatures up to 150°C, ensuring stable performance in challenging thermal environments. With a maximum gate-source threshold voltage of 3V, it is compatible with common logic-level driving circuits.

Key Features & Specifications

• Channel Type: N-Channel
• Drain-Source Voltage (Vds): 800V
• Continuous Drain Current (Id): 4A
• Drain-Source On-State Resistance (Rds(on)): 1.1ohm @ 10V
• Package Type: TO-252 (DPAK), 3-Pin
• Mounting Style: Surface Mount
• Power Dissipation: 63W
• Operating Temperature Range: Up to 150°C
• Gate-Source Threshold Voltage: 3V Max

This reliable Infineon MOSFET is a fundamental building block for efficient power conversion and control, providing excellent performance for professional electronic designs.