Infineon N-Channel CoolMOS Power MOSFET 800V 11A TO-220FP
Infineon N-Channel CoolMOS Power MOSFET, 800V, 11A, 0.39 ohm, TO-220FP through hole mounting for high efficiency power conversion.
The Infineon N-Channel CoolMOS Power MOSFET is an 800V device engineered with low specific on-state resistance. This advanced CoolMOS MOSFET delivers a significant reduction in conduction, switching, and driving losses, enabling high power density and efficiency for superior power conversion systems. As part of the latest generation of high voltage power MOSFETs, it contributes to making AC-DC power supplies more efficient, more compact, lighter, and cooler than ever before.
Key Features
- Very low energy storage in output capacitance (Eoss) at 400V
- Low gate charge (Qg)
- High efficiency and power density
Designed for through-hole mounting, this TO-220FP transistor provides robust performance with a continuous drain current of 11A and a drain source on-state resistance of 0.39 ohm. It offers reliable operation with a maximum operating temperature of 150°C and a power dissipation of 41W.
Measuring 43 mm in height, 33 mm in width, and 15 mm in depth, and weighing 200 grams, this component is built to integrate seamlessly into your electronic designs.
- For consumer electronics
- For computers
- For computer peripherals
- For power management
- Channel Type: N Channel
- Drain Source Voltage (Vds): 800V
- Continuous Drain Current (Id): 11A
- Drain Source On State Resistance: 0.39 ohm
- Transistor Case Style: TO-220FP
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Gate Source Threshold Voltage Max: 3V
- Power Dissipation: 41W
- No. of Pins: 3 Pins
- Operating Temperature Max: 150°C
- Height: 43 mm
- Width: 33 mm
- Depth: 15 mm
- Weight: 200 grams
- Easy to use Channel Type: N Channel
- of Pins: 3Pins
- SVHC: No SVHC (17-Jan-2023)
Documents
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