Infineon HEXFET N-Channel Power MOSFET 60V 210A TO-220AB

The Infineon HEXFET N-Channel Power MOSFET delivers superior performance with improved gate, avalanche, and dynamic dV/dt ruggedness. Engineered for demanding applications, this single N-channel MOSFET is highly suitable for high-efficiency synchronous rectification in switch-mode power supplies (SMPS), as well as hard-switched and high-frequency circuits.

This advanced component features fully characterised capacitance and avalanche Safe Operating Area (SOA), alongside an enhanced body diode for superior dV/dt and di/dt capability. Additionally, the device is halogen-free, aligning with modern environmental standards and requirements.

Key Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 60 V
• Continuous Drain Current (Id): 210 A
• Drain Source On-State Resistance: 3000 µohm
• Power Dissipation: 300 W
• Gate Source Threshold Voltage Max: 4 V
• Operating Temperature Max: 175 °C

Housed in a robust TO-220AB through-hole case style with 3 pins, this MOSFET measures 43 mm in height, 33 mm in width, and 15 mm in depth, with a lightweight design of just 4.385 grams. It provides reliable power management and precise motor drive control for your electronic projects.