Infineon N Channel Power MOSFET, 60 V, 2.7 A, 0.092 ohm, SOT-23

The Infineon N Channel HEXFET® Power MOSFET is expertly designed for load and system switching applications, offering exceptional efficiency and reliability. Featuring an industry-standard pinout, this component ensures seamless multi-vendor compatibility, making it a highly versatile choice for a wide range of electronic circuit designs. It is an environmentally-friendly solution tailored specifically for surface mount technology assemblies.

This advanced power MOSFET delivers consistent performance with a drain source voltage of 60 V and a continuous drain current of 2.7 A. The impressively low drain source on-state resistance of 0.092 ohm, tested at 10 V, ensures highly efficient power management with minimal energy loss and heat generation. Encased in a compact SOT-23 package, it is perfectly suited for space-constrained printed circuit board layouts.

Key Features & Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 60 V
• Continuous Drain Current (Id): 2.7 A
• Drain Source On State Resistance: 0.092 ohm
• Gate Source Threshold Voltage Max: 2.5 V
• Power Dissipation: 1.25 W
• Number of Pins: 3
• Operating Temperature Max: 150°C
• Transistor Case Style: SOT-23
• Transistor Mounting: Surface Mount

With its robust industrial qualification, this MOSFET provides dependable operation in demanding environments, making it a preferred choice for both audio and industrial systems requiring stable switching performance.