Infineon N Channel Power MOSFET 55V 27A TO-220AB

The Infineon N Channel Power MOSFET offers exceptionally low on-resistance per silicon area alongside fast switching performance. This combination, together with the ruggedised device design characteristic of HEXFET power MOSFETs, provides an efficient and reliable component for a wide variety of applications.

Featuring advanced process technology, this device includes a dynamic dv/dt rating and is fully avalanche rated. The logic-level gate drive allows for straightforward integration into lower voltage control circuits, enhancing design flexibility.

With a maximum drain-source voltage of 55V and a continuous drain current of 27A, this through-hole mounted MOSFET is well-suited for power management tasks. It boasts a low drain-source on-state resistance of just 0.035 ohm, ensuring minimal power loss during operation.

Key Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 55V
• Continuous Drain Current (Id): 27A
• Drain Source On-State Resistance: 0.035 ohm
• Mounting Type: Through Hole
• Rds(on) Test Voltage: 10V
• Gate Source Threshold Voltage Max: 2V
• Power Dissipation: 56W
• Number of Pins: 3
• Operating Temperature Max: 175°C

Measuring 43 mm in height, 33 mm in width, and 15 mm in depth, and weighing just 2 grams, this compact MOSFET is designed for efficient through-hole mounting on printed circuit boards.