Infineon N-Channel Power MOSFET 55V 110A TO-220AB
High-power Infineon N-Channel MOSFET, 55V, 110A, low Rds(on). Ideal for automotive and power management applications.
The Infineon N-Channel Power MOSFET is a robust, high-performance electronic component engineered with advanced HEXFET® technology. This design leverages the latest processing techniques to deliver an extremely low ON-resistance per silicon area, enhancing overall electrical efficiency and reducing power loss during operation.
Key features include an impressive maximum junction operating temperature of 175°C, which ensures reliable performance in demanding thermal environments. The device also offers fast switching speeds and an improved repetitive avalanche rating, making it exceptionally durable against voltage spikes and electrical stress. This combination of attributes establishes this MOSFET as an extremely efficient and reliable choice for a broad spectrum of power applications.
With its TO-220AB through-hole package, it is designed for straightforward installation and excellent thermal management when mounted to a heatsink. Its robust construction and advanced technology make it a cornerstone component for designers seeking reliability and high current handling capability.
- Automotive electronic systems
- Power management circuits
- Motor control units
- Switching power supplies
- Technology: HEXFET® N-channel
- Channel Type: N Channel
- Drain-Source Voltage (Vds): 55 V
- Continuous Drain Current (Id): 110 A
- Drain-Source On-State Resistance (Rds(on)): 6500 µΩ
- Rds(on) Test Voltage: 10 V
- Gate-Source Threshold Voltage (Max): 4 V
- Power Dissipation: 170 W
- Maximum Junction Operating Temperature: 175°C
- Package Type: TO-220AB
- Mounting Type: Through Hole
- Number of Pins: 3
- Weight: 2 grams
- Height: 43 mm
- Width: 33 mm
- Depth: 15 mm
- Special Feature: Advanced process technology for low ON-resistance
- Special Feature: Fast switching speed
- Special Feature: Improved repetitive avalanche rating
- Drain Source On State Resistance: 6500µohm
- Transistor Mounting: Through Hole
- of Pins: 3Pins
- Operating Temperature Max: 175°C
- SVHC: No SVHC (25-Jun-2025)
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