Infineon N-Channel Power MOSFET, 40V, 3.6A, 0.056 Ohm, SOT-23

The Infineon N-Channel HEXFET Power MOSFET is designed to deliver efficient performance with lower switching losses and increased reliability. This component is fully compatible with existing surface mount techniques, ensuring seamless integration into your circuit board designs. Featuring an industry-standard pinout, it simplifies the design process and facilitates straightforward assembly.

Engineered for demanding applications, this MOSFET boasts a Moisture Sensitivity Level of 1 (MSL1) and meets consumer qualification standards. It is also an environment-friendly choice for modern electronics, supporting sustainable manufacturing practices without compromising on performance or durability.

Ideal for power management and industrial systems, this surface mount transistor offers robust electrical characteristics. With a maximum drain-source voltage of 40V and a continuous drain current of 3.6A, it efficiently handles moderate power loads. The low drain-source on-state resistance of 0.056 ohm minimises conduction losses, thereby improving overall system efficiency. The SOT-23 package ensures a compact footprint, making it suitable for space-constrained applications where reliable power switching is essential.