INFINEON N-Channel Power MOSFET, 40V, 280A, TO-220AB
INFINEON N-Channel Power MOSFET, 40V, 280A, TO-220AB. Features ultra-low ON-resistance and fast switching for power management.
The INFINEON N-Channel Power MOSFET utilises the latest advanced processing techniques to achieve extremely low ON-resistance per silicon area. This HEXFET® single N-channel device is engineered for high efficiency and reliability, making it an excellent choice for a wide variety of demanding electronic applications.
Additional features of this design include a high junction operating temperature of 175°C, fast switching speed, and an improved repetitive avalanche rating up to Tjmax. These characteristics combine to create an extremely efficient and durable component that can withstand rigorous operating conditions while maintaining optimal performance and minimising power loss.
Key Features
- Advanced process technology
- Ultra-low ON-resistance for minimal power loss
- Fast switching capability
- Repetitive avalanche allowed up to Tjmax
Applications
This power MOSFET is primarily used in power management applications, offering robust performance and efficient power handling. Its through-hole mounting style and TO-220AB package allow for straightforward and secure integration into various circuit board designs, ensuring stability in high-current scenarios.
- Channel Type: N Channel
- Drain Source Voltage (Vds): 40V
- Continuous Drain Current (Id): 280A
- Drain Source On State Resistance: 2300µohm
- Rds(on) Test Voltage: 10V
- Gate Source Threshold Voltage Max: 4V
- Power Dissipation: 330W
- No. of Pins: 3 Pins
- Package Type: TO-220AB
- Transistor Mounting: Through Hole
- Operating Temperature Max: 175°C
- Height: 43 mm
- Width: 33 mm
- Depth: 15 mm
- Weight: 2 grams
- of Pins: 3Pins
- SVHC: No SVHC (25-Jun-2025)
Documents
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