INFINEON N-Channel Power MOSFET, 40V, 162A, TO-220AB

The INFINEON N-Channel Power MOSFET delivers fast switching performance and low on-resistance per silicon area, utilising advanced planar technology. This robust component is designed to meet demanding requirements, offering reliable power management and efficient operation in a variety of circuit designs.

Featuring a fully avalanche rating and a dynamic dV/dt rating, this MOSFET ensures stability and protection under rigorous conditions. It is automotive qualified, making it suitable for critical vehicle electronic systems. The device operates at temperatures up to 175°C, providing versatility for high-temperature environments.

With a drain source voltage of 40V and a continuous drain current of 162A, it offers high power handling capabilities. The through-hole mounting in a TO-220AB package allows for secure and straightforward installation on printed circuit boards. Measuring 43 mm in height, 33 mm in width, and 15 mm in depth, this 3-pin component is a compact yet powerful solution for your electronic projects. These specifications ensure consistent performance and durability across a wide range of operating conditions.

Key Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 40V
• Continuous Drain Current (Id): 162A
• Drain Source On State Resistance: 4000 µohm
• Power Dissipation: 200W
• Gate Source Threshold Voltage Max: 4V
• Rds(on) Test Voltage: 10V
• Transistor Mounting: Through Hole
• Package: TO-220AB