Infineon N Channel Power MOSFET 30V 5.3A SOT-23
Infineon N Channel HEXFET Power MOSFET, 30V, 5.3A, 0.027ohm in SOT-23 package. Ideal for consumer electronics and power management.
The Infineon N Channel Power MOSFET utilises advanced HEXFET® technology to deliver lower switch losses and increased reliability, making it an efficient choice for your circuit designs. This component is fully compatible with existing surface mount techniques, ensuring seamless integration into automated assembly processes.
Designed with an industry-standard pinout, this MOSFET offers excellent multi-vendor compatibility and is environment-friendly. It is specifically suited for consumer electronics and power management applications, providing robust performance with a continuous drain current of 5.3A and a drain source voltage of 30V.
Key Specifications
- Channel Type: N Channel
- Drain Source Voltage (Vds): 30V
- Continuous Drain Current (Id): 5.3A
- Drain Source On State Resistance: 0.027ohm
- Gate Source Threshold Voltage Max: 1.7V
- Power Dissipation: 1.3W
- Number of Pins: 3
- Operating Temperature Max: 150°C
Enclosed in a compact SOT-23 case style, this surface mount device operates efficiently within demanding thermal parameters, measuring 43mm in height, 33mm in width, and 15mm in depth, with a weight of just 0.051 grams.
- Channel Type: N Channel
- Drain Source Voltage (Vds): 30V
- Continuous Drain Current (Id): 5.3A
- Drain Source On State Resistance: 0.027ohm
- Transistor Case Style: SOT-23
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Gate Source Threshold Voltage Max: 1.7V
- Power Dissipation: 1.3W
- Number of Pins: 3
- Operating Temperature Max: 150°C
- Height: 43mm
- Width: 33mm
- Depth: 15mm
- Weight: 0.051 grams
- of Pins: 3Pins
- SVHC: No SVHC (25-Jun-2025)
Documents
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