Infineon N Channel Power MOSFET, 30 V, 171 A, TO-220AB

The Infineon N Channel Power MOSFET from the HEXFET series delivers high-performance power management for demanding applications. Designed with an ultra-low gate impedance and fully characterized avalanche voltage and current, this component ensures reliable and efficient operation.

This power MOSFET features a static drain-to-source on-resistance of just 1.9mohm (typical) and a low total gate charge of 40nC (typical), enabling efficient switching. It boasts a drain-to-source breakdown voltage of 30V and supports a continuous drain current of 171A, making it highly capable for robust electrical loads. The TO-220AB through-hole package offers straightforward mounting and robust connectivity.

Engineered for demanding environments, the device operates reliably across a junction temperature range from -55°C to +175°C. It provides rapid switching with a turn-on delay time of 19ns and a turn-off delay time of 32ns. With a maximum power dissipation of 125W and a gate source threshold voltage of 2.2V, it provides precise and dependable control.

The compact design measures 43 mm in height, 33 mm in width, and 15 mm in depth, with a lightweight profile of just 5.534 grams, facilitating easy integration into various circuit board layouts.