Infineon N Channel Power MOSFET, 30 V, 161 A, 3300 µohm, TO-252AA
Infineon N Channel Power MOSFET, 30V, 161A, TO-252AA Surface Mount. Ideal for high frequency DC-DC converters and power management.
The Infineon N Channel Power MOSFET is a high-performance HEXFET® single N-channel transistor designed for advanced power management applications. It features ultra-low gate impedance and fully characterised avalanche voltage and current, ensuring robust and reliable operation under demanding conditions.
A standout feature of this MOSFET is its very low static drain-to-source ON-resistance at a 4.5V gate-to-source voltage, making it ideal for logic-level applications. This low resistance significantly reduces power loss and improves overall efficiency in your circuit designs.
Applications
This component is highly suitable for high-frequency synchronous buck converters and high-frequency isolated DC-to-DC converters equipped with synchronous rectification. It is perfectly suited for use in power management systems, computers, computer peripherals, communications networking, and industrial equipment.
Specifications
- Channel Type: N Channel
- Drain Source Voltage (Vds): 30V
- Continuous Drain Current (Id): 161A
- Drain Source On State Resistance: 3300µohm
- Rds(on) Test Voltage: 10V
- Gate Source Threshold Voltage Max: 2.3V
- Power Dissipation: 140W
- Transistor Case Style: TO-252AA
- Mounting Type: Surface Mount
- Number of Pins: 3
- Operating Temperature Max: 175°C
Measuring 43 mm in height, 33 mm in width, and 15 mm in depth, and weighing just 0.702 grams, its surface mount design provides efficient and reliable performance for space-constrained PCB layouts and high-frequency power conversion needs.
- For high frequency synchronous buck converters
- For high frequency isolated DC-to-DC converters with synchronous rectification
- For power management applications
- For computers
- Channel Type: N Channel
- Drain Source Voltage Vds: 30V
- Continuous Drain Current Id: 161A
- Drain Source On State Resistance: 3300µohm
- Rds(on) Test Voltage: 10V
- Gate Source Threshold Voltage Max: 2.3V
- Power Dissipation: 140W
- Transistor Case Style: TO-252AA
- Transistor Mounting: Surface Mount
- No. of Pins: 3
- Operating Temperature Max: 175°C
- Height: 43 mm
- Width: 33 mm
- Depth: 15 mm
- Weight: 0.702 grams
- Logic level Channel Type: N Channel
- of Pins: 3Pins
- SVHC: No SVHC (25-Jun-2025)
Documents
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