Infineon N-Channel Power MOSFET, 200V 76A, TO-220AB
Infineon HEXFET power MOSFET, 200V, 76A, for SMPS, UPS & high-speed switching. TO-220AB through-hole package.
The Infineon N-Channel Power MOSFET is a high-performance HEXFET® semiconductor device engineered for demanding power management applications. Its robust construction and advanced design make it an ideal choice for enhancing efficiency and reliability in modern electronic systems.
This single N-channel MOSFET is specifically optimised for high-efficiency synchronous rectification within Switch-Mode Power Supplies (SMPS), a critical component in reducing energy loss. It is also exceptionally well-suited for use in uninterruptible power supplies (UPS), where consistent and reliable power switching is paramount. The component excels in high-speed power switching and is designed to perform reliably in both hard-switched and high-frequency circuit environments.
Key technological advancements provide superior operational ruggedness. The device features improved gate, avalanche, and dynamic dV/dt ruggedness, ensuring it can withstand voltage spikes and stressful switching conditions without failure. Engineers benefit from fully characterised capacitance and avalanche Safe Operating Area (SOA) data, allowing for precise and safe circuit design. Furthermore, the enhanced body diode dV/dt and dI/dt capability increases the durability of the intrinsic diode during commutation, contributing to overall system longevity and stability.
Housed in the industry-standard TO-220AB through-hole package, this MOSFET offers excellent thermal performance and ease of mounting on printed circuit boards (PCBs). Its high power dissipation rating supports operation in high-current scenarios, making it a versatile and dependable component for professional and industrial electronics design.
- High-efficiency synchronous rectification in SMPS (Switch-Mode Power Supplies)
- Uninterruptible Power Supply (UPS) systems
- High-speed power switching circuits
- Hard-switched and high-frequency circuit applications
- Channel Type: N Channel
- Drain Source Voltage (Vds): 200 V
- Continuous Drain Current (Id): 76 A
- Drain Source On-State Resistance (Rds(on)): 0.02 ohm
- Rds(on) Test Voltage: 20 V
- Gate Source Threshold Voltage Max: 5 V
- Power Dissipation: 375 W
- Operating Temperature Max: 175°C
- Transistor Case Style: TO-220AB
- Transistor Mounting: Through Hole
- Number of Pins: 3
- Weight: 1.361 grams
- Dimensions: 33mm (W) x 43mm (H) x 15mm (D)
- Drain Source On State Resistance: 0.02ohm
- of Pins: 3Pins
- SVHC: No SVHC (25-Jun-2025)
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