INFINEON N-Channel Power MOSFET 200V 65A 0.024 Ohm TO-220AB

The INFINEON N-Channel Power MOSFET is a high-performance HEXFET device designed for demanding applications. Specifically engineered as a PDP switch, it is ideal for sustain, energy recovery, and pass switch applications within plasma display panels. By utilising advanced techniques, this MOSFET achieves an exceptionally low on-resistance per silicon area alongside a high EPULSE rating, ensuring efficient power handling and minimal energy loss.

This component is built to deliver robust performance in industrial environments. It features a maximum operating temperature of 175°C, making it suitable for high-heat conditions. The low gate charge (QG) enables fast response times, while the short fall and rise times facilitate highly efficient fast switching. Additionally, the high repetitive peak current capability ensures reliable operation under heavy loads, and the repetitive avalanche capability provides added robustness and longevity.

With a drain-source voltage of 200V and a continuous drain current of 65A, this power MOSFET offers substantial capability for power management tasks. The through-hole mounting and TO-220AB case style ensure straightforward installation on circuit boards. Measuring 43 mm in height, 33 mm in width, and 15 mm in depth, it is compact enough for densely packed assemblies while still providing excellent thermal performance.

Key Features

• Low on-resistance per silicon area
• EPULSE rating
• Low QG for fast response
• High repetitive peak current capability
• Short fall and rise times for fast switching
• Repetitive avalanche capability