Infineon N Channel Power MOSFET, 200V, 30A, TO-247AC
Infineon N Channel Power MOSFET, 200V, 30A, 0.075 ohm in a TO-247AC package. Features low on-resistance & fast switching.
The Infineon N Channel Power MOSFET is a high-performance HEXFET device housed in a robust TO-247AC through-hole package. Engineered for exceptional efficiency and reliability, this transistor features extremely low on-resistance per silicon area, making it an ideal choice for circuit designs requiring high power density and minimal conduction losses.
Key attributes of this component include a dynamic dv/dt rating, ease of paralleling, and a fully avalanche-rated rugged construction. With fast switching speeds and simple drive requirements, this MOSFET is perfectly suited for a wide variety of demanding power management and conversion applications.
Specifications
- Channel Type: N Channel
- Drain Source Voltage (Vds): 200V
- Continuous Drain Current (Id): 30A
- On Resistance (Rds(on)): 0.075 ohm (75mohm at Vgs 10V)
- Gate to Source Voltage: ±20V
- Power Dissipation (Pd): 214W at 25°C
- Gate Source Threshold Voltage Max: 4V
- Operating Junction Temperature Range: -55°C to 175°C
- Number of Pins: 3
- Mounting Style: Through Hole
This advanced power MOSFET provides robust and dependable performance for your most demanding electronic projects and industrial applications.
- For applications requiring high efficiency and reliability
- For wide variety of power management applications
- For fast switching applications
- For paralleling configurations
- Channel Type: N Channel
- Drain Source Voltage (Vds): 200V
- Continuous Drain Current (Id): 30A
- Drain Source On State Resistance: 0.075ohm
- Package / Case: TO-247AC
- Mounting Type: Through Hole
- Rds(on) Test Voltage: 10V
- Gate Source Threshold Voltage Max: 4V
- Power Dissipation: 214W
- Number of Pins: 3
- Operating Temperature Max: 175°C
- Product Range: HEXFET Series
- Weight: 6 grams
- Height: 43 mm
- Width: 33 mm
- Depth: 15 mm
- Transistor Mounting: Through Hole
- of Pins: 3Pins
- SVHC: No SVHC (25-Jun-2025)
Documents
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