Infineon N-Channel Power MOSFET 200V 18A 0.1 ohm TO-220AB
Infineon N-Channel Power MOSFET, 200V, 18A, 0.1 ohm, TO-220AB. Ideal for class-D audio amplifiers and power management.
The Infineon N-Channel Power MOSFET utilises advanced processing techniques to achieve exceptionally low ON-resistance per silicon area. This makes it an ideal choice for demanding applications where power efficiency and performance are critical. The gate charge, body-diode reverse recovery, and internal gate resistance are specifically optimised to improve key class-D audio amplifier performance factors, including efficiency, total harmonic distortion (THD), and electromagnetic interference (EMI).
This device features a robust design with a 175°C operating junction temperature and repetitive avalanche capability, ensuring reliable operation under challenging conditions. It can deliver up to 300W per channel into an 8Ω load when used in a half-bridge configuration amplifier.
Key Performance Benefits
- Low RDS (ON) for improved efficiency
- Low Qg and Qsw for better THD and enhanced efficiency
- Low QRR for better THD and lower EMI
With compact dimensions of 43 mm x 33 mm x 15 mm and a lightweight design of just 2.826 grams, this through-hole mounting MOSFET is suitable for a variety of space-conscious circuit designs.
- For class-D audio amplifiers
- For battery operated drives
- For full-bridge applications
- For push-pull applications
- Channel Type: N Channel
- Drain Source Voltage (Vds): 200 V
- Continuous Drain Current (Id): 18 A
- Drain Source On State Resistance (RDS(on)): 0.1 ohm
- Transistor Case Style: TO-220AB
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10 V
- Gate Source Threshold Voltage Max: 4.9 V
- Power Dissipation: 100 W
- Number of Pins: 3
- Operating Temperature Max: 175°C
- Height: 43 mm
- Width: 33 mm
- Depth: 15 mm
- Weight: 2.826 grams
- HD and lower EMI Channel Type: N Channel
- Drain Source On State Resistance: 0.1ohm
- of Pins: 3Pins
- SVHC: No SVHC (25-Jun-2025)
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