Infineon N Channel Power MOSFET 150V 171A TO-247AC

The Infineon N Channel Power MOSFET utilises advanced Trench MOSFET technology to deliver low on-resistance per silicon area and fast switching performance. Designed as a single N-channel HEXFET® power transistor, it is engineered for robust and efficient operation in demanding electronic circuits.

This component features improved gate, avalanche, and dynamic dv/dt ruggedness, ensuring reliability under stressful conditions. It also boasts fully characterised capacitance and avalanche Safe Operating Area (SOA), alongside enhanced body diode dV/dt and dI/dt capability. With a maximum drain-source voltage of 150 V and a continuous drain current of 171 A, it provides substantial power handling for critical systems.

Key Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 150 V
• Continuous Drain Current (Id): 171 A
• On-State Resistance: 5900 µohm
• Power Dissipation: 517 W
• Mounting: Through Hole
• Case Style: TO-247AC

The through-hole mounting and TO-247AC case style facilitate straightforward integration into circuit boards. Measuring 43 mm in height, 33 mm in width, and 15 mm in depth, with a weight of just 6 grams, this MOSFET is suitable for compact yet high-power designs. It operates reliably at temperatures up to 175°C.