Infineon IRFP9140NPBF Power MOSFET, P-Channel, 100V 23A, TO-247AC
Infineon IRFP9140NPBF P-Channel MOSFET: 100V, 23A, 0.117Ω Rds(on). High-power, low-resistance switch for efficient power management.
The Infineon IRFP9140NPBF is a fifth-generation HEXFET® power MOSFET, engineered for high-efficiency power management and switching applications. Utilising advanced process technology, this P-channel device achieves an extremely low on-resistance of just 0.117Ω, maximising power efficiency and minimising heat generation in your designs. Its rugged construction and fast switching capabilities make it a reliable choice for demanding electronic environments.
Fully avalanche rated and featuring a dynamic dV/dt rating, this MOSFET is built to handle high-voltage transients and stressful operating conditions with confidence. It supports a high operating temperature of up to 175°C, ensuring stable performance in thermally challenging applications. The through-hole TO-247AC package is designed for robust mechanical mounting and excellent thermal dissipation, making it suitable for high-power circuits.
Key Specifications
- Channel Type: P-Channel
- Drain-Source Voltage (Vds): 100V
- Continuous Drain Current (Id): 23A
- Drain-Source On-State Resistance (Rds(on)): 0.117Ω
- Package / Case: TO-247AC
- Mounting Type: Through Hole
- Power Dissipation: 120W
- Gate-Source Threshold Voltage (Max): 4V
- Operating Temperature Max: 175°C
- Number of Pins: 3
With its combination of low resistance, high current handling, and rugged reliability, the IRFP9140NPBF provides designers with a highly efficient and dependable component for a wide variety of power electronics projects.
- Power management systems
- Switch-mode power supplies (SMPS)
- Motor control circuits
- DC-DC converters
- Channel Type: P Channel
- Drain Source Voltage (Vds): 100 V
- Continuous Drain Current (Id): 23 A
- Drain Source On-State Resistance (Rds(on)): 0.117 ohm
- Transistor Case Style: TO-247AC
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Gate Source Threshold Voltage Max: 4V
- Power Dissipation: 120W
- No. of Pins: 3 Pins
- Operating Temperature Max: 175°C
- Technology: Fifth-generation HEXFET with advanced processing
- Features: Dynamic dV/dt rating, Fully avalanche rated
- Weight: 5.443 grams
- Height: 43 mm
- Width: 33 mm
- Depth: 15 mm
- Drain Source On State Resistance: 0.117ohm
- of Pins: 3Pins
- SVHC: No SVHC (25-Jun-2025)
Documents
Always follow local regulations and product guidance.
Free standard delivery on UK mainland orders. Express delivery options and international shipping available at checkout.
We offer a 30-day money-back guarantee on most products. For faulty items, contact us within 14 days for a replacement or refund.
View Full Delivery & Returns PolicySecure Transactions
We take the utmost care with your payment and personal details. Our website employs advanced encryption technology, including Secure Sockets Layer (SSL), to protect your information during transmission. You can verify a secure connection by looking for 'https' and a locked padlock in your browser.
Cookie Policy
Cookies enhance your shopping experience by keeping track of your basket and remembering you when you return. We also use banner advertising based on your browsing history to present products of potential interest.
Security Warning
Beware of phishing scams! We will never ask for personal details via email. If such information is required, we'll request you to contact us by phone. If you receive an email requesting sensitive information, do not respond and let us know immediately.
You may like
