Infineon IRFP140NPBF N-Channel Power MOSFET, 100V, 33A, TO-247AC
High-power Infineon IRFP140NPBF MOSFET, 100V, 33A, low 0.052 ohm Rds(on). Avalanche rated for robust power management.
The Infineon IRFP140NPBF is a robust and high-performance N-channel HEXFET® Power MOSFET, engineered to deliver efficient power management in demanding electronic circuits. This advanced component utilises planar technology to achieve an extremely low on-resistance per silicon area, which minimises conduction losses and enhances overall system efficiency. Its fast switching performance makes it an ideal choice for applications requiring rapid power control and high-frequency operation.
Designed for reliability, this MOSFET features a high maximum operating temperature of 175°C and is fully avalanche rated, ensuring it can handle transient voltage spikes without failure. The dynamic dV/dt rating further contributes to its ruggedness in switching environments. Housed in a industry-standard TO-247AC package, it is suitable for through-hole mounting, providing a secure and thermally efficient connection to printed circuit boards.
Key Specifications & Features
- Advanced Technology: Built using Infineon's HEXFET planar technology for low Rds(on) and fast switching.
- High Power Handling: Capable of a continuous drain current of 33A and a power dissipation of 94W.
- Low On-Resistance: A drain-source on-state resistance of just 0.052 ohms at 10V gate drive reduces power loss.
- Robust Construction: Fully avalanche and dV/dt rated for enhanced durability in challenging electrical conditions.
- Wide Temperature Range: Operates reliably at temperatures up to 175°C.
This component is a fundamental building block for designers seeking a dependable, high-efficiency switching solution for a variety of power electronics projects.
- Power Management applications
- Switching power supplies (SMPS)
- Motor control circuits
- DC-DC converter modules
- Channel Type: N Channel
- Drain Source Voltage (Vds): 100V
- Continuous Drain Current (Id): 33A
- Drain Source On-State Resistance (Rds(on)): 0.052 ohm @ 10V
- Gate Source Threshold Voltage (Max): 4V
- Power Dissipation: 94W
- Operating Temperature Max: 175°C
- Transistor Case Style: TO-247AC
- Transistor Mounting: Through Hole
- Number of Pins: 3
- Special Feature: Fully avalanche rated
- Special Feature: Dynamic dV/dt rating
- Technology: HEXFET, planar
- Height: 43 mm
- Width: 33 mm
- Depth: 15 mm
- Weight: 5.67 grams
- Drain Source On State Resistance: 0.052ohm
- Rds(on) Test Voltage: 10V
- of Pins: 3Pins
- SVHC: No SVHC (25-Jun-2025)
Documents
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