Infineon IRF7313TRPBF Dual N-Channel MOSFET 30V 6.5A SOIC-8
Infineon IRF7313TRPBF dual N-channel MOSFET. 30V, 6.5A, 0.023 Ohm Rds(on) in SOIC-8 package. Ideal for industrial & power management.
The Infineon IRF7313TRPBF is a dual N-channel power MOSFET engineered with advanced Generation V technology. This design achieves an exceptionally low ON-resistance per silicon area, ensuring minimal power loss and maximum efficiency during operation. Its fast switching speed and ruggedised construction make it a highly reliable choice for demanding electronic circuits.
Housed in a customised SO-8 (SOIC) surface-mount package, this device benefits from an optimised lead-frame that enhances thermal performance and enables the dual-die configuration. This innovative packaging allows for superior heat dissipation and supports the integration of multiple components in a compact space, dramatically reducing the required PCB footprint for power-dense applications.
Fully avalanche-rated for robustness, this MOSFET is built to handle transient voltage spikes, increasing system reliability. Its combination of ultra-low resistance and efficient switching is ideal for managing power flow with precision and minimal energy waste.
Key Specifications
- Dual N-Channel Configuration: Two independent MOSFETs in a single package.
- Drain-Source Voltage (Vds): 30V.
- Continuous Drain Current (Id): 6.5A per channel.
- Drain-Source ON-Resistance (Rds(on)): An ultra-low 0.023 Ohm.
- Power Dissipation: 2W per channel.
- Operating Temperature Range: Up to a maximum of 150°C.
- Package Type: 8-pin SOIC (SO-8) Surface-Mount Device (SMD).
This component is a cornerstone for modern, efficient power design, offering a perfect balance of performance, size, and thermal management.
- Industrial power systems
- Power management circuits
- DC-DC converter design
- Motor drive controls
- Channel Type: N Channel
- Number of Channels: 2 (Dual)
- Drain Source Voltage (Vds): 30V
- Continuous Drain Current (Id): 6.5A
- Drain Source On-State Resistance (Rds(on)): 0.023 Ohm
- Technology: Generation V HEXFET
- Transistor Case Style: SOIC (SO-8)
- Mounting Type: Surface-Mount Device (SMD)
- No. of Pins: 8 Pins
- Power Dissipation: 2W per channel
- Operating Temperature Max: 150°C
- Special Feature: Fully avalanche rated
- Special Feature: Ultra low ON-resistance
- Special Feature: Custom lead-frame for enhanced thermal performance
- Dimensions (Approx.): 33mm (Width) x 43mm (Height) x 15mm (Depth)
- Weight: 0.194 grams
- Continuous Drain Current Id N Channel: 6.5A
- Continuous Drain Current Id P Channel: 6.5A
- Drain Source On State Resistance N Channel: 0.023ohm
- Drain Source On State Resistance P Channel: 0.023ohm
- of Pins: 8Pins
- Power Dissipation N Channel: 2W
- Power Dissipation P Channel: 2W
- SVHC: No SVHC (25-Jun-2025)
Documents
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