Infineon IRF530NPBF Power MOSFET TO-220AB 100V 17A

The Infineon IRF530NPBF is a 100V single N-channel HEXFET power MOSFET housed in a TO-220AB package, designed for high efficiency and reliability in a wide range of power applications.

This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged construction, and fast switching capabilities. Fully avalanche rated, it delivers robust performance even under demanding conditions.

Key Specifications

• Drain-to-source voltage (Vds): 100V
• Gate-to-source voltage: ±20V
• On-resistance (Rds(on)): 90mΩ at Vgs 10V
• Power dissipation: 70W at 25°C
• Continuous drain current (Id): 17A at Vgs 10V and 25°C
• Operating junction temperature range: -55°C to 175°C
• Package: TO-220AB
• Through-hole mounting

The IRF530NPBF is suitable for a variety of applications including power management, industrial equipment, portable devices, and consumer electronics. Its low on-resistance ensures minimal power loss, while the fast switching characteristics make it ideal for high-frequency circuits. The device’s ruggedness and avalanche rating provide reliable operation in harsh environments.

With a maximum gate-source threshold voltage of 4V and a power dissipation of 63W (as listed in specifications), this MOSFET offers excellent performance and durability. The 3-pin TO-220AB package ensures easy integration into standard through-hole PCB designs.

Whether for switching power supplies, motor control, or other power conversion applications, the Infineon IRF530NPBF delivers consistent and efficient performance.