Infineon IR2110SPBF Dual High & Low Side MOSFET/IGBT Driver SOIC-16

The Infineon IR2110SPBF is a high-voltage, high-speed power MOSFET and IGBT driver, engineered to deliver robust and reliable performance in demanding switching applications. It features independent high-side and low-side referenced output channels, with a floating channel architecture designed for efficient bootstrap operation. This design simplifies the gate drive circuitry while providing superior noise immunity and operational stability.

The driver supports a gate drive supply voltage range from 10V to 20V, offering flexibility for various system designs. It incorporates critical protection features such as undervoltage lockout (UVLO) for both channels, ensuring the device only operates within safe voltage parameters and preventing malfunction in low-voltage conditions. Its inputs are 3.3V logic compatible and feature CMOS Schmitt-triggering with pull-down resistors, providing excellent noise immunity and stable operation in noisy electrical environments.

For system safety, the IR2110SPBF includes cycle-by-cycle edge-triggered shutdown logic, enabling rapid fault response. It boasts matched propagation delay for both high and low-side channels (94ns output delay), which is crucial for maintaining precise timing in half-bridge and full-bridge configurations, minimising dead time and improving efficiency. The outputs are in phase with the inputs, simplifying control logic.

Housed in a compact SOIC-16 surface-mount package, it is ideal for space-constrained PCB designs. With a wide operating temperature range from -40°C to 125°C, this driver is suitable for industrial, automotive, and power supply applications where reliability under extreme conditions is essential.