Infineon High & Low Side IGBT MOSFET Driver IC SOIC-8 20V

The Infineon High & Low Side IGBT MOSFET Driver IC is a high-voltage driver with a floating high-side channel capable of operating up to 600V.

Overview

This driver integrated circuit is designed to control both high-side and low-side power switches, such as IGBTs and MOSFETs. It uses proprietary HVIC and latch-immune CMOS technology, resulting in a rugged, monolithic construction for demanding electronic circuits. The device features two independent, channel-referenced output channels, and the floating high-side channel is suited to driving N-channel power MOSFETs or IGBTs in bridge configurations.

Key Features

• Two independent, channel-referenced output channels
• Floating high-side channel capable of operating up to 600V
• Logic input compatible with standard CMOS, LSTTL and low-voltage logic down to 3.3V
• High pulse current output buffer stage designed to minimise driver cross-conduction
• Matched propagation delays for both channels, with an output delay of 150ns
• Under-voltage lockout (UVLO) protection
• Tolerant to negative transient voltages and immune to high dv/dt conditions

Applications

Typical applications include industrial motor drives and control systems, switch-mode power supplies (SMPS) and power management units, consumer electronics requiring robust power switching, and alternative energy systems such as solar inverters and wind turbine converters. It is also suited to half-bridge or full-bridge topologies that require reliable high-side switching.

Packaging

The device is supplied in a compact SOIC-8 surface-mount housing, designed for automated assembly, and has a moisture sensitivity level (MSL) of 2. Dimensions are 3.3 (width), 1.5 (depth) and 4.3 (height), with a weight of 1.793 gm.

This driver IC suits bridge-based switching circuits in motor drives, power supplies and renewable energy equipment, combining matched channel timing with under-voltage protection in a compact package.