Infineon IGBT Single Transistor 60A 1.6 kV TO-247

The Infineon IGBT Single Transistor is a 60 A, 1.6 kV reverse-conducting Insulated Gate Bipolar Transistor (IGBT) designed for demanding high-power switching applications. Its monolithic body diode is integrated directly into the silicon.

Overview

This TO-247 single transistor offers a collector-emitter voltage of 1.6 kV and a continuous collector current of 60 A, allowing it to handle significant power levels. A low collector-emitter saturation voltage of 1.85 V helps to minimise conduction losses, and a power dissipation rating of 263 W supports stable operation under load.

Key Features

• Integrated monolithic body diode with a low forward voltage, which can remove the need for an external diode in many circuits.
• Temperature-stable behaviour across a wide operating range, with a maximum operating temperature of 175°C.
• Positive temperature coefficient in VCE (collector-emitter voltage) for easy and safe parallel switching to scale up current handling.
• Very tight parameter distribution from unit to unit, supporting predictable circuit behaviour in mass production.
• Designed to help reduce electromagnetic interference (EMI), supporting regulatory compliance and system reliability.

Package and Assembly

The 3-pin TO-247 through-hole package is mechanically robust and suitable for manual or automated assembly processes. Dimensions (W x D x H) are 3.3 x 1.5 x 4.3, with a weight of 1 g.

Applications

Primary applications include high-efficiency power supplies, induction cooking systems and microwave ovens.

Choose the Infineon IGBT Single Transistor when you need a 60 A, 1.6 kV switching device in a through-hole TO-247 package for high-power designs.