INFINEON IGBT Single Transistor, 40A, 2.4V, 483W, 1.2kV, TO-247

The INFINEON IGBT Single Transistor is a 1200V discrete Insulated-Gate Bipolar Transistor featuring a very soft, fast recovery anti-parallel diode. It is specifically designed to replace planar MOSFETs in applications switching at frequencies below 70kHz.

A key feature of this transistor family is its MOSFET-like turn-off switching behaviour, which leads to significantly low turn-off losses. This makes the discrete IGBT ideal for both hard switching and soft switching applications, as well as other resonant topologies.

Key Benefits

• Low switching and conduction losses for high efficiency
• Fast switching behaviour with low EMI emissions
• Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
• Short circuit capability for robust performance

This high-performance component is perfectly suited for power management and alternative energy systems. With a continuous collector current of 40A and a maximum collector-emitter voltage of 1.2kV, it provides reliable power dissipation of 483W. Housed in a TO-247 through-hole mount case with 3 pins, it operates efficiently up to a maximum temperature of 175°C. The compact dimensions of 43 mm x 33 mm x 15 mm and a lightweight design of just 5.42 grams make it highly suitable for space-constrained circuit designs.