Infineon High Voltage Small Signal Diode 200V 250mA SOT-23
Infineon silicon switching diode, 200V, 250mA, SOT-23. Ideal for high-speed switching and power management applications. AEC-Q101 qualified.
The Infineon High Voltage Small Signal Diode is a silicon switching diode engineered for high-speed switching applications. Featuring a high breakdown voltage, this component ensures reliable performance in demanding electronic circuits and power management systems.
With a total power dissipation of 350mW and a breakdown voltage of 250V, this diode is well-suited for operations requiring robust voltage handling. It boasts a repetitive peak reverse voltage of 200V and an average forward current of 250mA, making it highly capable for small signal processing tasks.
Key Specifications
- Configuration: Single
- Forward Voltage Max: 1V
- Reverse Recovery Time: 50ns
- Forward Surge Current: 1A
- Capacitance: 5pF
- Operating Temperature Max: 150°C
Designed for surface mount installations, the diode comes in a compact SOT-23 case style with 3 pins, facilitating straightforward integration into your PCB layouts. It is qualified to the AEC-Q101 standard, ensuring suitability for automotive and other rigorous environments. This diode provides an optimal blend of high voltage capability and rapid switching response.
- Diode Configuration: Single
- Repetitive Peak Reverse Voltage: 200V
- Average Forward Current: 250mA
- Forward Voltage Max: 1V
- Reverse Recovery Time: 50ns
- Forward Surge Current: 1A
- Total Power Dissipation: 350mW
- Breakdown Voltage: 250V
- Capacitance: 5pF
- Operating Temperature Max: 150°C
- Diode Case Style: SOT-23
- Number of Pins: 3
- Diode Mounting: Surface Mount
- Qualification: AEC-Q101
- Weight: 0.033 grams
- Height: 43 mm
- Width: 33 mm
- Depth: 15 mm
- of Pins: 3Pins
- Product Range: BAS21
- SVHC: No SVHC (25-Jun-2025)
Documents
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