Infineon Dual P-Channel MOSFET, 55V, 3.4A, SOIC SMD
Infineon dual P-channel MOSFET, 55V, 3.4A, 0.095 Ohm in SOIC SMD package. Ideal for industrial & power management.
The Infineon Dual P-Channel MOSFET utilises advanced processing techniques to achieve exceptionally low ON-resistance per silicon area. This feature, combined with fast switching speed and a ruggedised design, makes this HEXFET Power MOSFET an extremely efficient choice for a wide variety of applications.
The SO-8 package has been carefully modified through a customised lead-frame for enhanced thermal characteristics and dual-die capability, making it ideal for various power management setups. With these specific improvements, multiple devices can be incorporated into a design with dramatically reduced board space, effectively optimising your circuit layout without compromising on performance.
Key Technologies and Features
- Generation V technology
- Ultra-low ON-resistance
- Surface-mount device (SMD)
- Dynamic dV/dt rating
- Fast switching performance
Designed to deliver reliable and efficient operation, this MOSFET is perfectly suited for demanding industrial environments and advanced power management systems. Its robust construction ensures longevity and stability even under high-stress thermal conditions, providing a solid foundation for your electronic designs.
- Channel Type: P Channel
- Drain Source Voltage (Vds): 55V
- Continuous Drain Current (Id): 3.4A
- Drain Source On State Resistance: 0.095 Ohm
- Transistor Case Style: SOIC
- Number of Pins: 8
- Power Dissipation: 2W
- Operating Temperature Max: 150°C
- Weight: 0.169 grams
- Height: 43 mm
- Width: 33 mm
- Depth: 15 mm
- Continuous Drain Current Id N Channel: 3.4A
- Continuous Drain Current Id P Channel: 3.4A
- Drain Source On State Resistance N Channel: 0.095ohm
- Drain Source On State Resistance P Channel: 0.095ohm
- of Pins: 8Pins
- Power Dissipation N Channel: 2W
- Power Dissipation P Channel: 2W
- SVHC: No SVHC (25-Jun-2025)
Documents
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