INFINEON Dual MOSFET N and P Channel 30V 6.5A SOIC

This INFINEON dual MOSFET integrates both N-channel and P-channel transistors in a single SOIC surface-mount package, providing a compact and efficient switching solution. Utilising Generation V technology, it offers ultra-low on-resistance of just 0.023 ohms for both channels, minimising power losses and enhancing overall efficiency in high-frequency applications.

With a drain-source voltage rating of 30V and a continuous drain current of 6.5A per channel, this device is well-suited for load switching, power management, and DC-DC conversion circuits. Each channel can dissipate up to 2W, ensuring reliable operation under moderate thermal loads. The SOIC-8 package is ideal for automated assembly and is widely used in space-constrained PCB designs.

Operates over a wide temperature range, up to a maximum junction temperature of 150°C, making it suitable for demanding environments. This device is RoHS-compliant and free from Substances of Very High Concern (SVHC), ensuring environmental compliance.

Key Features:

• Generation V technology for enhanced performance
• Complementary N and P channel configuration in one package
• Ultra-low on-resistance (0.023Ω) for both channels
• Surface-mount SOIC package with 8 pins
• High power dissipation of 2W per channel
• Suitable for high-frequency switching and power management