Infineon Dual MOSFET IC Half Bridge 10-20V 360mA DIP-8

The Infineon Dual MOSFET IC is a highly capable half-bridge gate driver designed for driving IGBT and MOSFET power switches. Operating with a supply voltage range of 10V to 20V, this component provides a robust sink current of 360mA and a source current of 210mA, ensuring efficient switching performance for demanding applications.

This IC incorporates several advanced protective and operational features. It includes a floating channel designed for bootstrap operation and is tolerant to negative transient voltage while offering dV/dt immunity. The under-voltage lockout feature safeguards the circuit during low voltage conditions, while the cross-conduction prevention logic and internally set dead time protect against shoot-through currents.

Designed for versatility, the driver is compatible with 3.3V, 5V, and 15V input logic. It features a non-inverting high-side output that is in phase with the input, matched propagation delay for both channels, and a shutdown input that simultaneously turns off both channels. The device operates reliably across a wide temperature range from -55°C to 150°C.

Housed in a standard DIP-8 through-hole package, the IC measures 43 mm in height, 33 mm in width, and 15 mm in depth, with a weight of just 1 gram. It delivers an output delay of 150ns and an input delay of 680ns, making it a precise and reliable choice for power management tasks.