Infineon Complementary N/P Channel Dual MOSFET 55V 4.7A SOIC

The Infineon Dual MOSFET is a complementary N and P channel device that utilises advanced processing techniques to achieve extremely low ON-resistance per silicon area. This feature, combined with fast switching speeds and a ruggedised design, makes this HEXFET Power MOSFET highly efficient for a wide variety of applications.

The SO-8 package has been modified through a customised lead-frame for enhanced thermal characteristics and dual-die capability, making it ideal for diverse power applications. With these improvements, multiple devices can be incorporated into a design with dramatically reduced board space. The packaged dimensions are 43 mm in height, 33 mm in width, and 15 mm in depth, with a weight of 0.213 grams.

Key Features

• Generation V technology
• Ultra-low ON-resistance
• Surface-mount device
• Fully avalanche rated
• Customised lead-frame for enhanced thermal performance

Specifications

• Channel Type: Complementary N and P Channel
• Drain Source Voltage (N Channel): 55V
• Drain Source Voltage (P Channel): 55V
• Continuous Drain Current (N Channel): 4.7A
• Continuous Drain Current (P Channel): 4.7A
• Drain Source On State Resistance (N Channel): 0.043 Ohm
• Drain Source On State Resistance (P Channel): 0.043 Ohm
• Transistor Case Style: SOIC
• Number of Pins: 8
• Power Dissipation (N Channel): 2W
• Power Dissipation (P Channel): 2W
• Maximum Operating Temperature: 150°C

This robust and reliable component ensures optimal performance for industrial and power management systems.