DIODES INC. Power MOSFET P Channel 50V 130mA SOT-323

The DIODES INC. Power MOSFET is a P-channel enhancement-mode FET engineered for efficient power management in modern electronic systems. Its robust moulded plastic case and alloy 42 lead-frame terminals, finished with solderable matte tin annealed to MIL-STD-202 standards, ensure reliable performance and durability in demanding applications.

This component excels in minimising ON-state resistance (RDS(ON)) while maintaining superior switching speed, making it an ideal choice for circuits where efficiency and speed are paramount. With low gate threshold voltage and low input capacitance, this MOSFET ensures responsive and controlled operation, reducing power losses in your design.

Key Features:

• Low ON-resistance for efficient power handling
• Low gate threshold voltage for easy drive compatibility
• Low input capacitance to improve switching performance
• Fast switching speed for high-frequency applications
• Halogen-free, green device supporting environmental goals
• Moisture sensitivity level 1 per J-STD-020 for robust assembly
• UL94V-0 flammability rating for safety assurance

With a drain-source voltage rating of 50V and continuous drain current of 130mA, this transistor supports a range of low-power switching tasks. It comes in a compact SOT-323 package, specifically designed for surface mounting to save board space while delivering reliable thermal performance. The component operates up to a maximum temperature of 150°C, with a power dissipation of 200mW.

Ideal for use in power management systems and specialised sectors like aerospace and defence, this MOSFET is a dependable choice for engineers focused on performance and longevity.