DIODES INC. PNP Medium Power Transistor, E-Line
PNP silicon planar medium power bipolar transistor by Diodes Inc. Features 1A current, 100V Vce, E-Line through-hole mounting.
This PNP Silicon Planar Medium Power Bipolar Transistor from Diodes Inc. is designed for reliable performance in a variety of demanding electronic circuits. It offers a continuous collector current of 1A and a collector-base voltage of 120V, making it suitable for medium power applications where consistent current handling is essential.
Featuring an E-Line case style and through-hole mounting, this transistor is easy to install on printed circuit boards. With a transition frequency of 150MHz and a minimum DC current gain (hFE) of 40, it delivers efficient switching and amplification. The component operates effectively across a wide temperature range, from -55°C up to 200°C, ensuring stability in extreme environments.
Key Specifications
- Transistor Polarity: PNP
- Collector Emitter Voltage (Max): 100V
- Collector-Base Voltage: 120V
- Continuous Collector Current: 1A
- Power Dissipation: 1W
- Transition Frequency: 150MHz
- DC Current Gain (hFE Min): 40hFE
- Operating Temperature Range: -55°C to 200°C
Compact in size, the component measures 43mm in height, 33mm in width, and 15mm in depth, with a lightweight profile of just 0.2 grams, making it ideal for space-constrained assemblies. Whether used for power management or heavy-duty industrial systems, this robust transistor provides the durability and electrical characteristics required for professional electronic design.
- Transistor Polarity: PNP
- Collector Emitter Voltage Max: 100V
- Collector-Base Voltage: 120V
- Continuous Collector Current: 1A
- Power Dissipation: 1W
- Transistor Case Style: E-Line
- Transistor Mounting: Through Hole
- Number of Pins: 3
- Transition Frequency: 150MHz
- DC Current Gain hFE Min: 40hFE
- Operating Temperature Min: -55°C
- Operating Temperature Max: 200°C
- Height: 43 mm
- Width: 33 mm
- Depth: 15 mm
- Weight: 0.2 grams
- of Pins: 3Pins
- SVHC: No SVHC (25-Jun-2025)
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