DIODES INC. P Channel Power MOSFET, 30 V, 1.1 A, SOT-23

This P-channel enhancement mode MOSFET from Diodes Inc. utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes it an ideal choice for high efficiency, low voltage, and power management applications.

Featuring low on-resistance and fast switching speed, this MOSFET ensures efficient power handling. The device also offers low gate drive and a low threshold, providing flexibility and ease of use in various circuit designs.

Key Specifications

• Channel Type: P Channel
• Drain Source Voltage (Vds): 30 V
• Continuous Drain Current (Id): 1.1 A
• Drain Source On State Resistance: 0.35 ohm
• Gate Source Voltage: ±20 V
• Gate Source Threshold Voltage Max: 1 V
• Power Dissipation: 625 mW
• Rds(on) Test Voltage: 10 V

Encapsulated in a compact SOT-23 surface mount package with 3 pins, this MOSFET is designed for automated assembly and space-constrained applications. The operating and storage temperature range spans from -55°C to +150°C, ensuring reliable performance across demanding environmental conditions.

With its robust construction and precise electrical characteristics, this power MOSFET delivers consistent and dependable operation for your power management needs.