Diodes DMN6075S-7 N-Channel Power MOSFET 60V 2A SOT-23

Diodes DMN6075S-7 N-Channel Power MOSFET delivers 60V and 2A ratings in a compact SOT-23 surface-mount package for efficient power management circuits.

The Diodes Inc. DMN6075S-7 is an N-channel enhancement mode power MOSFET built on a new generation process. Its design is optimised to minimise on-state resistance (RDS(ON)), which helps reduce power losses and supports strong switching performance in high-efficiency applications. The device is housed in a compact SOT-23 package, making it suited to space-constrained designs such as portable electronics, power supplies, and DC-DC converter modules.

Key Features

• Low On-Resistance: Static drain-source on-resistance of 85 milliohms maximum (at VGS=10V), reducing conduction losses.
• Fast Switching Speed: Low input capacitance enables rapid switching transitions, minimising switching losses and supporting higher frequency operation in power converters.
• High Current Capability: Pulsed drain current of up to 12A (with a 10µs pulse), providing headroom for transient load conditions.
• Wide Temperature Range: Operating and storage temperature range from -55°C to +150°C.
• Gate Protection: Gate-source voltage rating of up to ±20V.

Applications

The MOSFET is suited to power management functions where efficiency and compact size are important. Common uses include backlighting driver circuits for displays, load switching, motor control, and as the main switching element in synchronous and non-synchronous DC-DC buck, boost, and buck-boost converters.

Specifications

• Drain-Source Voltage (Vds): 60V
• Continuous Drain Current (Id): 2A
• Package: SOT-23 surface-mount
• Weight: 0.121 g

Choose the Diodes DMN6075S-7 N-channel power MOSFET for compact, efficient power management designs requiring 60V and 2A ratings.