DIODES INC. Dual MOSFET, N & P Channel, 30V, 3.8A, TSOT-26
DIODES INC. complementary N & P channel dual MOSFET, 30V, 3.8A, 0.034 Ohm. Ideal for high efficiency power management. TSOT-26 SMD package.
The DIODES INC. Dual MOSFET has been expertly designed to minimise on-state resistance while maintaining superior switching performance. This makes it an ideal choice for high-efficiency power management applications where reliability and speed are critical.
Featuring complementary N and P channel configurations, this surface-mount device delivers balanced and efficient performance. The low on-resistance ensures minimal power loss during operation, while the low input capacitance and fast switching speed allow for rapid state changes, improving overall circuit efficiency.
With a drain-source voltage of 30V for both channels and a continuous drain current of 3.8A, this MOSFET provides robust capability in a compact package. It is housed in a TSOT-26 case style with 6 pins, making it highly suitable for space-constrained, surface-mount PCB designs.
Key Features
- Complementary N and P Channel configuration
- Low On-Resistance (0.034 Ohm)
- Low Input Capacitance
- Fast Switching Speed
- Surface-mount TSOT-26 package
Whether you are designing advanced power management systems or compact portable devices, this dual MOSFET offers a dependable and highly efficient solution for your switching and amplification needs.
- Channel Type: Complementary N and P Channel
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 3.8A
- Continuous Drain Current Id P Channel: 3.8A
- Drain Source On State Resistance N Channel: 0.034 Ohm
- Drain Source On State Resistance P Channel: 0.034 Ohm
- Transistor Case Style: TSOT-26
- Number of Pins: 6
- Power Dissipation N Channel: 850mW
- Power Dissipation P Channel: 850mW
- Operating Temperature Max: 150°C
- Mounting Type: SMD
- Height: 43 mm
- Width: 33 mm
- Depth: 15 mm
- Weight: 5 grams
- of Pins: 6Pins
- SVHC: No SVHC (25-Jun-2025)
Documents
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