Diodes Inc. BS250P P-Channel Power MOSFET, 45V, 230mA, 14 Ohm, E-Line

The Diodes Inc. BS250P is a P-channel enhancement mode vertical DMOS field-effect transistor (MOSFET) designed for efficient switching and amplification in low-power electronic circuits. It features a drain-source breakdown voltage of -45V and a continuous drain current rating of 230mA, making it suitable for a variety of control and power management applications.

This MOSFET offers a low static drain-source on-state resistance (RDS(on)) of 14 ohms maximum, which helps to minimise conduction losses and improve overall circuit efficiency. Its E-Line through-hole package ensures reliable mechanical mounting and straightforward integration into printed circuit boards (PCBs).

Key Electrical Characteristics

• Drain-Source Voltage (Vds): 45V
• Continuous Drain Current (Id): 230mA
• Gate-Source Threshold Voltage: -3.5V (max)
• Zero Gate Voltage Drain Current: -500nA maximum, ensuring low leakage in the off-state.
• Forward Transconductance: 150mS typical, providing good gain characteristics.
• Input Capacitance: 60pF typical, contributing to fast switching performance.
• Switching Speed: Turn-on/off time of 20ns maximum for rapid response in switching applications.
• Power Dissipation: 700mW at 25°C ambient temperature.

Physical and Operational Details

Housed in a compact E-Line package, this 3-pin component is intended for through-hole mounting. It is built to operate reliably across a broad temperature range from -55°C to +150°C, making it robust for various environmental conditions. Its design prioritises stability and durability for long-term use in consumer electronics, power supplies, and embedded systems.

Whether you are designing a new circuit or replacing a component, the BS250P provides a dependable and specification-driven solution for your P-channel MOSFET requirements.