Diodes BC847BS-7-F Dual NPN Transistor Array SOT-363

The Diodes BC847BS-7-F Dual NPN Transistor Array is a surface-mount transistor array with a minimum collector-emitter breakdown voltage of 45 V, suited to switching and audio frequency (AF) amplifier applications.

Overview

The BC847BS-7-F contains two independent NPN transistors in a single 6-pin SOT-363 surface-mount package. Its compact footprint suits electronic designs where board space is limited. The device is rated for a power dissipation of 200 mW at an ambient temperature of +25°C and is intended for stable operation across a variety of circuit designs.

Electrical Characteristics

The transistor array offers a minimum collector-emitter breakdown voltage of 45 V and a collector-base breakdown voltage of 50 V, providing margin for many standard circuit voltages. It has a DC collector current rating of 100 mA and a minimum DC current gain (hFE) of 200. The gain bandwidth product of 100 MHz supports high-frequency response for audio and signal processing tasks.

Key Features

• Two independent NPN transistors in one package, simplifying circuit design and saving space
• Collector-emitter voltage rating up to 45 V and collector-base voltage rating up to 50 V
• Continuous collector current of 100 mA
• Minimum DC current gain (hFE) of 200
• Transition frequency of 100 MHz, suitable for AF and RF applications
• Space-saving 6-pin SOT-363 surface-mount package for SMT assembly
• Operating and storage temperature range from -55°C to +150°C

Choose the Diodes BC847BS-7-F when you need a dual NPN transistor array in a compact surface-mount package for switching, amplification, and signal processing circuits.